{"id":21968,"date":"2022-05-30T11:19:32","date_gmt":"2022-05-30T10:19:32","guid":{"rendered":"https:\/\/www.innovationnewsnetwork.com\/?p=21968"},"modified":"2022-05-30T11:19:32","modified_gmt":"2022-05-30T10:19:32","slug":"creating-next-generation-semiconductors","status":"publish","type":"post","link":"https:\/\/www.innovationnewsnetwork.com\/creating-next-generation-semiconductors\/21968\/","title":{"rendered":"Creating next-generation semiconductors"},"content":{"rendered":"

Researchers improve silicon-based semiconductor technology by developing next-generation, 2D semiconductors that have the ability to power future AI systems.<\/h2>\n

To achieve Artificial Intelligence (AI) systems<\/a> that have the potential to power autonomous driving, \u00a0processors that function as the brain of computers must be able to process more data. However, silicon-based semiconductors \u2013 which are essential components of computer processors \u2013 have limitations. As a result, scientists have been working towards the creation of improved, next-generation semiconductors.<\/p>\n

Two-dimensional, next-generation semiconductors<\/h3>\n

To achieve this, studies are being conducted on electronic devices based on two-dimensional semiconductors at an atomic level. However, it is more difficult to control the electrical properties when utilising two-dimensional semiconductors than in conventional silicon-based semiconductor devices. Thus, many researchers have encountered difficulties when attempting to implement various logic devices with two-dimensional semiconductors.<\/p>\n

However, a joint research team from the Korea Institute of Science and Technology<\/a>\u00a0have announced that they have succeeded in implementing two-dimensional semiconductor-based electronic and logic devices, whose electrical properties can be freely controlled by developing a new ultra-thin electrode material (Cl-SnSe2).<\/p>\n

The research team was led by Dr Do Kyung Hwang of the Centre for Opto-Electronic Materials and Devices and Professor Kimoon Lee of the Department of Physics at Kunsan National University.<\/p>\n

\"next-generation
Operation results of the two-dimensional semiconductor device and logic device implemented by the joint research team – Korea Institute of Science and Technology (KIST)<\/figcaption><\/figure>\n

Novel ultra-thin electrode material<\/h3>\n

The researchers were able to control the electrical properties of semiconductor electronic devices using the two-dimensional electrode, which is a Cl-doped Tin Diselenide material – labelled Cl-SnSe2.<\/p>\n

The team found it challenging to implement complementary logic circuits with conventional two-dimensional semiconductor devices because they only exhibit the characteristics of either N-type or P-type devices due to the Fermi-level pinning phenomenon.<\/p>\n

In contrast, using the electrode material developed by the joint research team, it is possible to freely control the characteristics of the N-type and P-type devices by minimising defects with the semiconductor interface.<\/p>\n

Improving conventional silicon semiconductors<\/h3>\n

This single device performs the functions of both N-type and P-type devices. Hence, there is no need to manufacture the N-type and P-type devices separately, such as when using a silicon-based semiconductor. By using this device, the joint research team successfully implemented a high-performance, low-power, complementary logic circuit that can perform different logic operations such as NOR and NAND.<\/p>\n

\u201cThis development will contribute to accelerating the commercialisation of next-generation system technologies such as Artificial Intelligence systems, which have been difficult to use in practical applications due to technical limitations caused by the miniaturisation and high integration of conventional silicon semiconductor devices,\u201d commented Dr Hwang.<\/p>\n

\u201cThe developed two-dimensional electrode material is very thin; hence, they exhibit high light transmittance and flexibility. Therefore, they can be used for next-generation flexible and transparent semiconductor devices,\u201d concluded Dr Hwang.<\/p>\n","protected":false},"excerpt":{"rendered":"

Researchers improve silicon-based semiconductor technology by developing next-generation, 2D semiconductors that have the ability to power future AI systems. To achieve Artificial Intelligence (AI) systems that have the potential to power autonomous driving, \u00a0processors that function as the brain of computers must be able to process more data. However, silicon-based semiconductors \u2013 which are essential […]<\/p>\n","protected":false},"author":19,"featured_media":21969,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_monsterinsights_skip_tracking":false,"_monsterinsights_sitenote_active":false,"_monsterinsights_sitenote_note":"","_monsterinsights_sitenote_category":0,"footnotes":""},"categories":[830],"tags":[24128,885,24208],"acf":[],"yoast_head":"\nCreating next-generation semiconductors<\/title>\n<meta name=\"description\" content=\"Researchers improve silicon-based semiconductor technology by developing next-generation, 2D semiconductors to power future AI systems.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.innovationnewsnetwork.com\/creating-next-generation-semiconductors\/21968\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Creating next-generation semiconductors\" \/>\n<meta property=\"og:description\" content=\"Researchers improve silicon-based semiconductor technology by developing next-generation, 2D semiconductors to power future AI systems.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.innovationnewsnetwork.com\/creating-next-generation-semiconductors\/21968\/\" \/>\n<meta property=\"og:site_name\" content=\"Innovation News Network\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/InnoNewsNetwork\" \/>\n<meta property=\"article:published_time\" content=\"2022-05-30T10:19:32+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.innovationnewsnetwork.com\/wp-content\/uploads\/2022\/05\/iStockblackdovfx-1309105555.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"1920\" \/>\n\t<meta property=\"og:image:height\" content=\"1080\" 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