Operation results of the two-dimensional semiconductor device and logic device implemented by the joint research team – Korea Institute of Science and Technology (KIST)<\/figcaption><\/figure>\nNovel ultra-thin electrode material<\/h3>\n The researchers were able to control the electrical properties of semiconductor electronic devices using the two-dimensional electrode, which is a Cl-doped Tin Diselenide material – labelled Cl-SnSe2.<\/p>\n
The team found it challenging to implement complementary logic circuits with conventional two-dimensional semiconductor devices because they only exhibit the characteristics of either N-type or P-type devices due to the Fermi-level pinning phenomenon.<\/p>\n
In contrast, using the electrode material developed by the joint research team, it is possible to freely control the characteristics of the N-type and P-type devices by minimising defects with the semiconductor interface.<\/p>\n
Improving conventional silicon semiconductors<\/h3>\n This single device performs the functions of both N-type and P-type devices. Hence, there is no need to manufacture the N-type and P-type devices separately, such as when using a silicon-based semiconductor. By using this device, the joint research team successfully implemented a high-performance, low-power, complementary logic circuit that can perform different logic operations such as NOR and NAND.<\/p>\n
\u201cThis development will contribute to accelerating the commercialisation of next-generation system technologies such as Artificial Intelligence systems, which have been difficult to use in practical applications due to technical limitations caused by the miniaturisation and high integration of conventional silicon semiconductor devices,\u201d commented Dr Hwang.<\/p>\n
\u201cThe developed two-dimensional electrode material is very thin; hence, they exhibit high light transmittance and flexibility. Therefore, they can be used for next-generation flexible and transparent semiconductor devices,\u201d concluded Dr Hwang.<\/p>\n","protected":false},"excerpt":{"rendered":"
Researchers improve silicon-based semiconductor technology by developing next-generation, 2D semiconductors that have the ability to power future AI systems. To achieve Artificial Intelligence (AI) systems that have the potential to power autonomous driving, \u00a0processors that function as the brain of computers must be able to process more data. However, silicon-based semiconductors \u2013 which are essential […]<\/p>\n","protected":false},"author":19,"featured_media":21969,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_monsterinsights_skip_tracking":false,"_monsterinsights_sitenote_active":false,"_monsterinsights_sitenote_note":"","_monsterinsights_sitenote_category":0,"footnotes":""},"categories":[830],"tags":[24128,885,24208],"acf":[],"yoast_head":"\n
Creating next-generation semiconductors<\/title>\n \n \n \n \n \n \n \n \n \n \n \n \n\t \n\t \n\t \n \n \n \n \n \n\t \n\t \n\t \n