{"id":10206,"date":"2021-03-22T13:05:34","date_gmt":"2021-03-22T13:05:34","guid":{"rendered":"https:\/\/www.innovationnewsnetwork.com\/?p=10206"},"modified":"2021-03-22T13:05:34","modified_gmt":"2021-03-22T13:05:34","slug":"european-mmic-project","status":"publish","type":"post","link":"https:\/\/www.innovationnewsnetwork.com\/european-mmic-project\/10206\/","title":{"rendered":"European MMIC project aims to improve space technology"},"content":{"rendered":"
The Kassiopeia project, which launched this month, aims to deliver a fully independent value-added supply chain using technology which is currently only accessible in Europe. The consortium, consisting of Ferdinand-Braun-Institut<\/a>, the University of Bristol<\/a> in the UK and Swedish GaN-on-SiC materials provider SweGaN<\/a>, will produce individual advanced semiconductor components such as silicon carbide (SiC) substrates; GaN epitaxy and device processing; and larger devices including power amplifiers. In order to demonstrate the potential of this supply chain, the project will produce GaN MMICs operating on the Ka-band frequency, the section of the microwave segment of the electromagnetic spectrum with frequencies ranging between 26.5GHz and 40GHz.<\/p>\n \u201cThe unique selling point of our GaN MMIC technology is its highly reproducible and reliable iridium sputter-gate technology,\u201d said Dr Joachim W\u00fcrfl, head of the Power Electronics department at Ferdinand-Braun-Institut. \u201cThis technique reduces dynamic losses through gate lagging to values up to two times less than competing institutional and industrial technologies.\u201d<\/p>\n The project is able to benefit from sector-leading technologies developed at Ferdinand-Braun-Institut, including industry-compatible MMICs developed on 100mm GaN-on-SiC wafers, which have been shown to significantly improve the reliability of devices; as well as novel approaches to circuit concepts and process technology aimed at reducing parasitic energy losses. Meanwhile, researchers at the University of Bristol are focusing primarily on conducting direct thermal measurements on active GaN transistors \u2013 these will be performed using micro-Raman thermography techniques and advanced modelling of the devices\u2019 key characteristics.<\/p>\n SweGaN, whose contribution to the project is funded by Rymdstyrelsen, the Swedish national space agency, will provide semi-insulated SiC substrates for evaluation; as well as sharing specialist knowledge of epitaxial layer design<\/a> and optimisation. \u201cWe are excited to participate in this ESA-aligned project, together with Ferdinand-Braun-Institut and the University of Bristol,\u201d commented SweGaN founder and CTO Jr-Tai Chen. \u201cConventional GaN-on-SiC materials for Ka-band applications still lack maturity, leaving significant room for innovation and improvement. SweGaN will introduce its revolutionary epitaxial manufacturing process to address the challenge.\u201d<\/p>\nReproducible and reliable<\/h3>\n
Innovation and improvement<\/h3>\n